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High Voltage IGBT with Diode IXGQ 20N120B IXGQ 20N120BD1
VCES IC25 VCE(sat)
tfi(typ)
= 1200 = 40 = 3.4 = 160
V A V ns
BD1
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 110C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 10 Clamped inductive load TC = 25C
Maximum Ratings 1200 1200 20 30 40 20 100 ICM = 40 @0.8 VCES 190 -55 ... +150 150 -55 ... +150 V V V V A A A A W C C C C g
TO-3P (IXGQ)
G
C
E
(TAB)
G = Gate E = Emitter Features
C = Collector TAB = Collector
Mounting torque
1.13/10 Nm/lb.in. 300 6
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight
International standard package IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages Saves space (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 20N120B 20N120BD1 5.0 25 50 100 TJ=125C 2.9 2.8 3.4 V A A nA V V
VGE(th) ICES IGES VCE(sat)
IC
= 250 A, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 20A, VGE = 15 V Note 2
(c) 2003 IXYS All rights reserved
DS99136(12/03)
IXGQ 20N120B IXGQ 20N120BD1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 16 1700 70 80 23 62 IC = 20A, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = 20 A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Note 1. 9 24 20 14 270 160 2.1 25 18 1.4 270 360 4.5 (TO-247) 0.25 380 S pF pF pF pF nC nC nC ns ns ns 320 n s 3.5 mJ ns ns mJ ns ns mJ 0.65 K/W K/W TO-3P (IXGQ) Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 20A; VCE = 10 V, Note 2.
20N120B VCE = 25 V, VGE = 0 V, f = 1 MHz 20N120BD1
Inductive load, TJ = 125C IC = 20A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Note 1
Reverse Diode (FRED) Symbol IF VF IRM t rr t rr RthJC Test Conditions TC = 90C IF = 10 A, VGE = 0 V
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10 3.3 14 120 40 A V A ns ns 2.5 K/W
IF = 10 A; -diF/dt = 400 A/s, VR = 600 V VGE = 0 V; TJ = 125C IF = 1 A; -diF/dt = 100 A/s; VR = 30 V, VGE = 0 V
Notes:
1. 2.
Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGQ 20N120B IXGQ 20N120BD1
Fig. 1. Output Characteristics @ 25 Deg. C
40 35 30 VGE = 15V 13V 11V 9V 160 VGE = 15V 140 120 13V
Fig. 2. Extende d Output Characteris tics @ 25 deg. C
I C - Amperes
25 20 15 10 5 5V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 7V
I C - Amperes
100 80 60 40 20 0
11V
9V
7V 5V
0
2
4
6
8
V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C
40 35 30 VGE = 15V 13V 11V 9V 1.5 1.4 VGE = 15V
V C E - Volts
10
12
14
16
18
20
Fig. 4. Depende nce of V CE(sat) on Tem perature
25 20 15 10 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5V 7V
V C E (sat)- Normalized
1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75
I C = 40A
I C - Amperes
I C = 20A
I C = 10A
100
125
150
V CE - Volts Fig. 5. Colle ctor-to-Em itter Voltage vs . Gate-to-Em iite r voltage
6.5 6 5.5 TJ = 25C 50 40 60
TJ - Degrees Centigrade Fig. 6. Input Adm ittance
4.5 4 3.5 3 2.5 2 1.5 6 7 8 9
I C - Amperes
5
VC E - Volts
I C = 40A 20A 10A
30
20 10
TJ = 125C 25C -40C
0 10 11 12 13 14 15 16 17 4 5 6 7 8 9
V G E - Volts
V G E - Volts
(c) 2003 IXYS All rights reserved
IXGQ 20N120B IXGQ 20N120BD1
Fig. 7. Trans conductance
24 21 18 TJ = -40C 25C 125C 16 14 12 TJ = 125C VGE = 15V VCE = 960V
Fig. 8. Dependence of Turn-off Ene rgy Loss on RG
I C = 40A
15 12 9 6 3 0 0 10 20 30 40 50 60
E off - milliJoules
g f s - Siemens
10 8 I C = 20A 6 4 2 0 10 30 50 70 90 110 130 150 I C = 10A
I C - Amperes Fig. 9. Dependence of Turn-Off Ene rgy Loss on Ic
14 12 10 8 6 4 2 0 10 15 20 TJ = 125C R G = 10 R G = 100 - - VGE = 15V VCE = 960V TJ = 125C 14 12 10 8 6 4 2 R G = 10 R G = 100 - - VGE = 15V VCE = 960V
R G - Ohms Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature
I C = 40A
E off - MilliJoules
E off - milliJoules
I C = 20A
TJ = 25C
I C = 10A 0 25 30 35 40 25 35 45 55 65 75 85 95 105 115 125
I C - Amperes
TJ - Degrees Centigrade Fig. 12. Depe ndence of Turn-off Sw itching Tim e on Ic
550
Fig. 11. Dependence of Turn-off Sw itching Tim e on RG
1400
Switching Time - nanoseconds
1200
1000
TJ = 125C VGE = 15V VCE = 960V
Switching Time - nanoseconds
td(off) tfi - - - - - -
500 450 400 350 300 250 200
td(off) tfi - - - - - R G = 10 VGE = 15V VCE = 960V TJ = 125C
800
I C = 10A I C = 40A
600
400 I C = 20A 10 30 50 70 90 110 130 150
TJ = 25C
200
R G - Ohms
10
15
20
25
30
35
40
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGQ 20N120B IXGQ 20N120BD1
Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature
500
Fig. 14. Gate Charge
15 VCE = 600V IC = 20A IG = 1 0mA
Switching Time - nanoseconds
450
td(off) tfi - - - - - R G = 10 VGE = 15V VCE = 960V
I C = 40A 12
400
350 300
I C = 20A
I C = 10A
VG E - Volts
9
6
I C = 40A 3
250
200 25 35 45 55 65 75 85 95 105 115 125
0
TJ - Degrees Centigrade Fig. 15. Capacitance
10000 f = 1 MHz
0
10
20
30
40
50
60
70
Q G - nanoCoulombs
Capacitance - p F
1000
C ies
100
C oes
C res 10 0 5 10 15 20 25 30 35 40
V C E - Volts
Fig. 16. Maxim um Transient Therm al Resistance
1.0
R (th) J C - (C/W)
0.5
0.1 1 10
Pulse Width - milliseconds
100
1000
(c) 2003 IXYS All rights reserved
IXGQ 20N120B IXGQ 20N120BD1
30 A 25 IF 20
TVJ=150C
2000 nC 1500 Qr 1000
TVJ=100C
TVJ= 100C VR = 600V
40
TVJ= 100C A VR = 600V
15 10
TVJ= 25C
IF= 20A IF= 10A IF= 5A
IRM
30
IF= 20A IF= 10A IF= 5A
20
500
10
5 0 0 100 0
0
1
2
3 VF
4V
A/s 1000 -diF/dt
0
200
400
600 A/s 1000 800 -diF/dt
Fig. 17 Forward current IF versus VF
Fig. 18 Reverse recovery charge Qr versus -diF/dt
150 ns 140
TVJ= 100C VR = 600V
Fig. 19 Peak reverse current IRM versus -diF/dt
120 V
tfr TVJ= 100C IF = 10A VFR
2.0
1.2 s tfr 0.8
1.5 Kf 1.0
trr 130 120 110
IF= 20A IF= 10A IF= 5A
VFR
80
IRM
40
0.4
0.5
Qr
100 90 0 0.0 600 A/s 1000 800 diF/dt
0.0
0
40
80
120 C 160 TVJ
0
200
400
600 -diF/dt
800 A/s 1000
0
200
400
Fig. 20 Dynamic parameters Qr, IRM versus TVJ
10 K/W 1 ZthJC 0.1
Fig. 21 Recovery time trr versus -diF/dt
Fig. 22 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 1.449 0.558 0.493 ti (s) 0.0052 0.0003 0.017
0.01
0.001 0.00001
DSEP 8-12A
0.0001
0.001
0.01
0.1
s t
1
Fig. 23 Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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